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Plating technology for semiconductor wafers

Plating technology for semiconductor wafers:

UBM fabrication by electroless plating or bump-fabrication of several tens of micrometer by electroplating on the electrodes (Al or Cu) of semiconductor wafers。

Eletroless UBM plating technology

 

@Specifications

@Specifications / Plating technology for semiconductor wafers

 

AFeatures (electroless plating)

AFeatures (electroless plating) / Plating technology for semiconductor wafers

 ・Enable a plating even for isolated Al pads
 ・Enable a quick delivery, low cost, and saving resources due to the cut of the seed-sputtering and the photolithography process.


 

BFeatures (electroless plating)

BFeatures (electroless plating) / Plating technology for semiconductor wafers

Excellent adhesion

COther features

・Enable Cu writing and Al writing
・Adaptable for high crystalline orientation of Al base materials
・Processible 12” wafer
・Acceptable TAIKO wafers
・Past performance: thickness of > 130 mm (8” wafer), > 100 mm (12” wafer), 
 *acceptable from a trial production for thinner wafers.
・We propose a suitable plating for bonding condition such as solder junction or wire bonding.
・Protectable for backside metalized wafer (original technology; adaptable for thin wafers)

Electroplating technology for micro-bump fabrication

@Specifications

@Specifications / Plating technology for semiconductor wafers

AFeatures

AFeatures / Plating technology for semiconductor wafers

・Enable  φ20μm-size micro-bump fabrication
・Adoptable various bump materials : Ni, Cu, Sn, SnAg, Au, …
・Example of micro-bump fabrication

 

 / Plating technology for semiconductor wafers

・ Processible from electrolytic seed layer – photolithography – electrolytic bump fabrication

BOther features

・Integrated production from sputtering – photolithography – plating – to reflow process.
・Various plating options
・Undertaking design and fabrication of masks if the design information is opened.
・Acceptable from one wafer.

 

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